|Type:||RF Power MOSFET||Continuous Leakage Current:||250 MA|
|Technology:||GaN Si||Working Frequency:||1800 MHz To 2200 MHz|
|Working Temperature Range:||-55 To +150||Package:||NI-400S-2|
n channel power mosfet,
fast switching transistor
Mosfet Power Transistor A3G20S250-01SR3 Airfast RF Power GaN Transistor, 1800-2200 MHz, 45 W Avg., 48 V
This 45 W RF power GaN transistor is designed for cellular base station applications covering the frequency range of 1800 to 2200 MHz. This part is characterized and performance is guaranteed for applications operating in the 1800 to 2200 MHz band. There is no guarantee of performance when this part is used in applications designed outside of these frequencies.
High terminal impedances for optimal broadband performance
Designed for digital predistortion error correction systems
Optimized for Doherty applications
Mosfet Power Transistor
|Product Type||RF MOSFET Transistors|
|Working Frequency||1800 MHz to 2200 MHz|
|Working Temperature||-55 to +150|
|Continuous Leakage Current||250 mA|
|Vds-Leakage Source Breakdown Voltage||150V|
Q1. Can we return back the goods?
A: Sure, if you are not satisfied with the quality, you can send the original box back to exchange or refund.You pay the return ship cost.We pay the back cost.
B: If you get wrong item and the mistake made by yourself;we can offer return too.But you should pay the ship cost both.And you can ask us to exchange or refund.
Q2. Quality problems
A: We could offer technical support or return service if there is any quality problems.
Q3. What is your lead time ?
A: It depends on different items. For in-stock products, most of the parts could be shipped out within 3 days after payment have been confirmed. Otherwise, we will let you know.
Q4. May I have a sample for testing ?
A: It depends on differnet items, some are need to paid, but some not. But you also need to pay shipping cost.