Through Hole Mosfet Power Transistor 1.1V Vgs Th - Gate Source Threshold Voltage

Basic Information
Place of Origin: Original
Brand Name: Original brand
Certification: Original
Model Number: BSZ037N06LS5ATMA1
Minimum Order Quantity: 5000pcs
Price: Negotiation
Packaging Details: 5000pcs
Delivery Time: 2-3days
Payment Terms: T/T
Supply Ability: 100000pcs
Continuous Leakage Current: 65 A Installation: Through Hole
Package: TO-247-3 Transistor Polarity: N-Channel
Channel Pattern: Enhancement Pd-Power Dissipation: 446 W
Vds-Leakage Source Breakdown Electric Shock: 650 V
High Light:

n channel power mosfet


fast switching transistor

Mosfet Power Transistor NVHL040N65S3F M Superfet3 650V TO247 PKG N-Channel




•100%avalanchetested •Superiorthermalresistance





Product validation

Fully qualified according to JEDEC for Industrial Application




Mosfet Power Transistor

Package TSDSON-8 FL
Serise OptiMOS
Leakage Source on-resistance 3.7 mOhms
Continuous Leakage Current 40A
Pd-Power Dissipation 69 W
Vgs th-Gate Source threshold Voltage 1.1V
Channel Pattern Enhancement



Q. What is your lead time?

A: Most of the products are in-stock so we can send out within 3 days after payment is confirmed. Some special products may need longer time, but please do not worry about that, we will let you know before your order.


Q. What is your warranty?

A: 1200 days after goods have been received. Our products will be 100% tested before they are sent out. 


Q. What's the MOQ for your products?

A: We accept small orders from our customers, but it depends on different items so please contact with us.


 Through Hole Mosfet Power Transistor 1.1V Vgs Th - Gate Source Threshold Voltage 0

Contact Details

Phone Number : +8613632656443

WhatsApp : +8613632656443