|Package:||TO-247-3||Continuous Leakage Current:||65A|
|Channel Pattern:||Enhancement||Installation:||Through Hole|
|Transistor Polarity:||N-Channel||Pd-Power Dissipation:||446 W|
|Vds-Leakage Source Breakdown Electric Shock:||650 V|
n channel power mosfet,
fast switching transistor
Mosfet Power Transistor NVHL040N65S3F M Superfet3 650V TO247 PKG N-Channel
SUPERFET III MOSFET is new high voltage super−junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low on−resistance and lower gate charge performance. This advanced technology is tailored to minimize conduction loss, provide superior switching performance, and withstand extreme dv/dt rate. Consequently, SUPERFET III MOSFET is very suitable for the various power system for miniaturization and higher efficiency. SUPERFET III FRFET MOSFET’s optimized reverse recovery performance of body diode can remove additional component and improve system reliability.
• 700 V @ TJ= 150°C
• Typ. RDS(on)= 33.8 m
• Ultra Low Gate Charge (Typ. Qg= 153 nC)
• Low Effective Output Capacitance (Typ. Coss(eff.)= 1333 pF)
• 100% Avalanche Tested
• AEC−Q101 Qualified and PPAP Capable
• Automotive On Board Charger HEV−EV
• Automotive DC/DC converter for HEV−EV
Mosfet Power Transistor
|Channel No.||1 Channel|
|Leakage Source on-resistance||40 mOhms|
|Continuous Leakage Current||65A|
|Pd-Power Dissipation||446 W|
|Vgs th-Gate Source threshold Voltage||3V|
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A: Yes certainly. Please just contact us and send us your BOM and then we'll quote for you. If your Bom is clear with quantity, it would be better. Furthermore, if you have target price, please also let us know.