STP7NK80ZFP Transistors IC Integrated Circuit MOSFET N-CH 800V 5.2A 3 Pin TO-220FP Tube

Basic Information
Place of Origin: Shenzhen, China
Brand Name: STMicroelectronics
Certification: Original Part
Model Number: STP7NK80ZFP
Minimum Order Quantity: 1PCS
Price: to be Negotiated
Packaging Details: TO-220FP
Delivery Time: Immediate
Payment Terms: T/T, Western Union, Paypal, Wechat Pay
Supply Ability: 1 Million pieces per Month
Packaging: TO-220FP Product Type: Transistors MOSFET N-CH 800V 5.2A 3-Pin(3+Tab) TO-220FP Tube
Warranty: 365 Days Quality: Original
Certification: SGS,CE Description: Electronic Component
High Light:

single chip microcontroller


ultra low power microcontroller

STP7NK80ZFP Transistors MOSFET N-CH 800V 5.2A 3-Pin(3+Tab) TO-220FP Tube



General Description :

The SuperMESH™ series is obtained through an extreme optimization of ST’s well established strip-based PowerMESH™ layout. In addition to pushing on-resistance significantly down, special care is taken to ensure a very good dv/dt capability for the most demanding applications. Such series complements ST full range of high voltage Power MOSFETs including revolutionary MDmesh™ products.


Distinctive Characteristics :

Part No: STP7NK80ZFP

Description: Transistors MOSFET N-CH 800V 5.2A 3-Pin(3+Tab) TO-220FP Tube

Drain Current (Max): 5.2 A
Frequency (Max): Not Required MHz
Gate-Source Voltage (Max): ±30(V)
Output Power (Max): Not Required W
Power Dissipation: 30(W)
Mounting: Through Hole
Noise Figure: Not Required dB
Drain-Source On-Res: 1.8(ohm)
Operating Temp Range: -55C to 150C
Package Type: TO-220FP
Packaging: Rail/Tube
Pin Count: 3 +Tab
Polarity: N
Type: Power MOSFET
Number of Elements: 1
Operating Temperature Classification: Military
Channel Mode: Enhancement
Drain Efficiency: Not Required %
Drain-Source On-Volt: 800(V)
Power Gain: Not Required dB
Rad Hardened: No
Continuous Drain Current: 5.2(A)



Features :

Extremely high dv/dt capability

100% avalanche tested,

Gate charge minimized,

Very low intrinsic capacitances,

Very good manufacturing repeatability,



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