| Place of Origin: | Shenzhen, China |
|---|---|
| Brand Name: | STMicroelectronics |
| Certification: | Original Part |
| Model Number: | STP100N8F6 |
| Minimum Order Quantity: | 1PCS |
| Price: | Negotiation |
| Packaging Details: | TO-220 |
| Delivery Time: | Immediate |
| Payment Terms: | T/T, Western Union, Paypal, Wechat Pay |
| Supply Ability: | 1 Million pieces per Month |
| Packaging: | TO-220 | Product Type: | MOSFET N-channel 80 V, 0.008 Ohm Type, 100 A, STripFET F6 Power MOSFET In A TO-220 Package |
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| High Light: | n channel power mosfet,fast switching transistor |
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STP100N8F6 MOSFET N-channel 80 V, 0.008 Ohm type, 100 A, STripFET F6 Power MOSFET in a TO-220 package
General Description :
This device is an N-channel Power MOSFET developed using the STripFET™ F6 technology with a new trench gate structure.
The resulting Power MOSFET exhibits very low RDS(on) in all packages.
Distinctive Characteristics :
Part No: STP100N8F6
Description: Trans MOSFET N-CH 80V 100A 3-Pin(3+Tab) TO-220 Tube
| Product Category | Power MOSFET |
| Process Technology | STripFET F6 |
| Configuration | Single |
| Channel Mode | Enhancement |
| Channel Type | N |
| Number of Elements per Chip | 1 |
| Maximum Drain Source Voltage (V) | 80 |
| Maximum Gate Source Voltage (V) | ±20 |
| Maximum Gate Threshold Voltage (V) | 4 |
| Maximum Continuous Drain Current (A) | 100 |
| Maximum Gate Source Leakage Current (nA) | 100 |
| Maximum IDSS (uA) | 1 |
| Maximum Drain Source Resistance (mOhm) | 9@10V |
| Typical Gate Charge @ Vgs (nC) | 100@10V |
| Typical Gate Charge @ 10V (nC) | 100 |
| Typical Input Capacitance @ Vds (pF) | 5955@25V |
| Maximum Power Dissipation (mW) | 176000 |
| Typical Fall Time (ns) | 21 |
| Typical Rise Time (ns) | 46 |
| Typical Turn-Off Delay Time (ns) | 103 |
| Typical Turn-On Delay Time (ns) | 33 |
| Minimum Operating Temperature (°C) | -55 |
| Maximum Operating Temperature (°C) | 175 |
| Packaging | Tube |
| Automotive | No |
| Pin Count | 3 |
| Supplier Package | TO-220AB |
| Standard Package Name | TO-220 |
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