STGWA60H65DFB Transistors IGBT Chip N-CH 650V 80A 375000mW 3 PinTO-247 Tube

Basic Information
Place of Origin: Shenzhen, China
Brand Name: STMicroelectronics
Certification: Original Part
Model Number: STGWA60H65DFB
Minimum Order Quantity: 1PCS
Price: to be Negotiated
Packaging Details: TO-247
Delivery Time: Immediate
Payment Terms: T/T, Western Union, Paypal, Wechat Pay
Supply Ability: 1 Million pieces per Month
Packaging: TO-247 Product Type: Transistors IGBT Chip N-CH 650V 80A 375000mW 3-Pin(3+Tab) TO-247 Tube
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STGWA60H65DFB Transistors IGBT Chip N-CH 650V 80A 375000mW 3-Pin(3+Tab) TO-247 Tube

 

 


General Description :

These devices are IGBTs developed using an advanced proprietary trench gate field-stop structure. These devices are part of the new HB series of IGBTs, which represent an optimum compromise between conduction and switching loss to maximize the efficiency of any frequency converter. Furthermore, the slightly positive VCE (sat) temperature coefficient and very tight parameter distribution result in safer paralleling operation.

 


Distinctive Characteristics :

Part No: STGWA60H65DFB    

Description: Transistors IGBT Chip N-CH 650V 80A 375000mW 3-Pin(3+Tab) TO-247 Tube

Collector Current (DC): 80(A)
Package Type: TO-247
Mounting: Through Hole
Collector-Emitter Voltage: 650(V)
Operating Temperature Classification: Military
Rad Hardened: No
Pin Count: 3 +Tab
Configuration: Single
Channel Type: N
Operating Temperature (Max): 175C
Gate to Emitter Voltage (Max): '±20(V)
Operating Temperature (Min): -55C
Packaging: Rail/Tube

 



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