| Place of Origin: | Shenzhen, China |
|---|---|
| Brand Name: | STMicroelectronics |
| Certification: | Original Part |
| Model Number: | STGD5H60DF |
| Minimum Order Quantity: | 1PCS |
| Price: | to be Negotiated |
| Packaging Details: | DPAK |
| Delivery Time: | Immediate |
| Payment Terms: | T/T, Western Union, Paypal, Wechat Pay |
| Supply Ability: | 1 Million pieces per Month |
| Packaging: | DPAK | Product Description: | Trans IGBT Chip N-CH 600V 10A 83000mW 3-Pin(2+Tab) DPAK T/R |
|---|---|---|---|
| Product Type: | IGBTs | Package Type: | Surface Mount |
| Condition: | Brand New And Original | Shipping By: | DHL\UPS\Fedex\EMS\HK Post |
| High Light: | computer ic chip,computer integrated chip |
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STGD5H60DF Trans IGBT Chip N-CH 600V 10A 83000mW 3-Pin(2+Tab) DPAK T/R
Basic Information :
Part No: STGD5H60DF
Description: Trans IGBT Chip N-CH 600V 10A 83000mW 3-Pin(2+Tab) DPAK T/R
| Lead Shape | Gull-wing |
| Package Length | 6.6(Max) |
| Package Width | 6.2(Max) |
| Tab | Tab |
| PCB changed | 2 |
| Package Height | 2.4(Max) |
| Mounting | Surface Mount |
| Technology | Field Stop|Trench |
| Channel Type | N |
| Configuration | Single |
| Maximum Gate Emitter Voltage (V) | ±20 |
| Maximum Collector-Emitter Voltage (V) | 600 |
| Typical Collector Emitter Saturation Voltage (V) | 1.5 |
| Maximum Continuous Collector Current (A) | 10 |
| Maximum Gate Emitter Leakage Current (uA) | 0.25 |
| Maximum Power Dissipation (mW) | 83000 |
| Minimum Operating Temperature (°C) | -55 |
| Maximum Operating Temperature (°C) | 175 |
| Packaging | Tape and Reel |
| Automotive | No |
| Pin Count | 3 |
| Standard Package Name | TO-252 |
| Supplier Package | DPAK |
| Military | No |
for product datasheet, CONTACT US directly.
