|Product:||STWA65N60DM6||Continuous Leakage Current:||155 A|
n channel power mosfet,
high power transistor
Mosfet Power Transistor STWA65N60DM6 Mosfet N-channel 600 V, 0.084 Ohm typ., 30 A MDmesh DM6 Power TO-247
• Extremely low RDS(on)*area and Qg and optimized capacitance profi le for light load conditions
• Extremely high dv/dt
• Optimized body diode recovery phase
• Optimized softness
• Charging stations for electric vehicles
• LED lighting
• Solar inverters
• Extremely high effi ciency performance and increased power density
• More robust power conversion in ZVS, full and half bridge topologies
• Higher operation frequencies and better thermal management
• Reduced EMI
MOSFET T8 40V LOW COSS
|Channel No.||1 Channel|
|Leakage Source on-resistance||71 mOhms|
|Qg-Gate Charge||61 nC|
|Continuous Leakage Current||38A|
|Vds-Leakage Source Breakdown Voltage||600V|
Q1. How about the quality?
A: We test 100% before we ship out and we can offer 120days quality assurance.
Q2. What is your terms of payment?
A: Order below 10000USD is T/T 100% in advance .
B: Order over 10000USD T/T 50% as deposit to arrange goods.and rest 50% before delivery.
C: Sample order we can support
D: We support PAYPAL, UnionPay and Alipay.
Q3. What is your terms of delivery?
A: EXW, FOB, CFR, CIF.(defaults EXW for all quotation)