Low Gate Charge Cool GaN Mosfet Power Transistor 125 W Pd - Power Dissipation

Basic Information
Place of Origin: Original
Brand Name: Original brand
Certification: Original
Model Number: IGOT60R070D1AUMA1
Minimum Order Quantity: 800pcs
Price: Negotiation
Packaging Details: 800/Reel
Delivery Time: 2-3days
Payment Terms: T/T
Supply Ability: 100000pcs
Product: MOSFET 600V Cool GaN Power Transistor Technology: GaN
Package: PG-DSO-20 Transistor Polarity: N-Channel
Installation: SMD/SMT Pd-Power Dissipation: 125 W
Vds-Leakage Source Breakdown Electric Shock: 600 V
High Light:

high power transistor


fast switching transistor

Mosfet Power Transistor IGOT60R070D1AUMA1 MOSFET 600V CoolGaN Power Transistor



• Enhancement mode transistor – Normally OFF switch

• Ultra fast switching

• No reverse-recovery charge

• Capable of reverse conduction

• Low gate charge, low output charge

• Superior commutation ruggedness

• Qualified for industrial applications according to JEDEC Standards (JESD47 and JESD22)



• Improves system efficiency

• Improves power density

• Enables higher operating frequency

• System cost reduction savings

• Reduces EMI





MOSFET 600V CoolGaN Power Transistor

Transistor Polarity N-Channel
Working Temperature Range  -55C to +150C
Leakage Source on-resistance 70 mOhms
Package PG-DSO-20
Pd-Power Dissipation 125 W
Vgs th-Gate Source threshold Voltage 600 V
Continous Leakage Current 31 A



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 Low Gate Charge Cool GaN Mosfet Power Transistor 125 W Pd - Power Dissipation 0

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