| Place of Origin: | Original |
|---|---|
| Brand Name: | Original brand |
| Certification: | Original |
| Model Number: | IGOT60R070D1AUMA1 |
| Minimum Order Quantity: | 800pcs |
| Price: | Negotiation |
| Packaging Details: | 800/Reel |
| Delivery Time: | 2-3days |
| Payment Terms: | T/T |
| Supply Ability: | 100000pcs |
| Product: | MOSFET 600V Cool GaN Power Transistor | Technology: | GaN |
|---|---|---|---|
| Package: | PG-DSO-20 | Transistor Polarity: | N-Channel |
| Installation: | SMD/SMT | Pd-Power Dissipation: | 125 W |
| Vds-Leakage Source Breakdown Electric Shock: | 600 V | ||
| High Light: | high power transistor,fast switching transistor |
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Mosfet Power Transistor IGOT60R070D1AUMA1 MOSFET 600V CoolGaN Power Transistor
Features
• Enhancement mode transistor – Normally OFF switch
• Ultra fast switching
• No reverse-recovery charge
• Capable of reverse conduction
• Low gate charge, low output charge
• Superior commutation ruggedness
• Qualified for industrial applications according to JEDEC Standards (JESD47 and JESD22)
Benefits
• Improves system efficiency
• Improves power density
• Enables higher operating frequency
• System cost reduction savings
• Reduces EMI
| Categories |
MOSFET 600V CoolGaN Power Transistor |
|---|---|
| IGOT60R070D1AUMA1 | |
| Transistor Polarity | N-Channel |
| Working Temperature Range | -55C to +150C |
| Leakage Source on-resistance | 70 mOhms |
| Package | PG-DSO-20 |
| Pd-Power Dissipation | 125 W |
| Vgs th-Gate Source threshold Voltage | 600 V |
| Continous Leakage Current | 31 A |
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