| Place of Origin: | Original |
|---|---|
| Brand Name: | Original brand |
| Certification: | Original |
| Model Number: | IGT60R070D1ATMA1 |
| Minimum Order Quantity: | 2000pcs |
| Price: | Negotiation |
| Packaging Details: | 2000/Reel |
| Delivery Time: | 2-3days |
| Payment Terms: | T/T |
| Supply Ability: | 100000pcs |
| Package: | PG-HSOF-8 | Technology: | GaN |
|---|---|---|---|
| Transistor Polarity: | N-Channel | Channel Pattern: | Enhancement |
| Product: | MOSFET 600V CoolGaN Power Transistor | Pd-Power Dissipation: | 125 W |
| Vds-Leakage Source Breakdown Electric Shock: | 600V | ||
| High Light: | n channel power mosfet,high power transistor |
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Mosfet Power Transistor IGT60R070D1ATMA1 Mosfet 600V CoolGaN Power Transistor
Feature
• Enhancement mode transistor – Normally OFF switch
• Ultra fast switching
• No reverse-recovery charge
• Capable of reverse conduction
• Low gate charge, low output charge
• Superior commutation ruggedness
• Qualified for industrial applications according to JEDEC Standards (JESD47 and JESD22)
Benefits
• Improves system efficiency
• Improves power density
• Enables higher operating frequency
• System cost reduction savings
• Reduces EMI
| Categories |
Mosfet Power Transistor |
|---|---|
| IGT60R070D1ATMA1 | |
| Transistor Polarity | N-Channel |
| Channel No. | 1 Channel |
| Leakage Source on-resistance | 70 mOhms |
| Configure | Single |
| Pd-Power Dissipation | 125 W |
| Vgs th-Gate Source threshold Voltage | 0.9 V |
| Channel Pattern | Enhancement |
FAQ:
Q1: What payment items we can use?
AliBaba Trade Assurance / Wire Transfer / MoneyGram
Western Union / PayPal / WeChat Pay / Ali Pay
Q2: What is the Credit Card Chanels?
AliBaba Trade Assurance / PayPal
Q3: When can you deliver my product?
Please send us the Remittance Copy when payments done, so that we can arrange the goods.
