IGT60R070D1ATMA1 Gan Power Transistors , Industrial High Speed Transistor

Basic Information
Place of Origin: Original
Brand Name: Original brand
Certification: Original
Model Number: IGT60R070D1ATMA1
Minimum Order Quantity: 2000pcs
Price: Negotiation
Packaging Details: 2000/Reel
Delivery Time: 2-3days
Payment Terms: T/T
Supply Ability: 100000pcs
Package: PG-HSOF-8 Technology: GaN
Transistor Polarity: N-Channel Channel Pattern: Enhancement
Product: MOSFET 600V CoolGaN Power Transistor Pd-Power Dissipation: 125 W
Vds-Leakage Source Breakdown Electric Shock: 600V
High Light:

n channel power mosfet


high power transistor

Mosfet Power Transistor IGT60R070D1ATMA1 Mosfet 600V CoolGaN Power Transistor



• Enhancement mode transistor – Normally OFF switch

• Ultra fast switching

• No reverse-recovery charge

• Capable of reverse conduction

• Low gate charge, low output charge

• Superior commutation ruggedness

• Qualified for industrial applications according to JEDEC Standards (JESD47 and JESD22)



• Improves system efficiency

• Improves power density

• Enables higher operating frequency

• System cost reduction savings

• Reduces EMI





Mosfet Power Transistor

Transistor Polarity N-Channel
Channel No.  1 Channel
Leakage Source on-resistance 70 mOhms
Configure Single
Pd-Power Dissipation 125 W
Vgs th-Gate Source threshold Voltage 0.9 V
Channel Pattern Enhancement



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Please send us the Remittance Copy when payments done, so that we can arrange the goods.



 IGT60R070D1ATMA1 Gan Power Transistors , Industrial High Speed Transistor 0

Contact Details

Phone Number : +8613632656443

WhatsApp : +8613632656443