BVDSS 25V - 30V High Current Mosfet , On State Resistance Fast Switching Transistor

Basic Information
Place of Origin: Original
Brand Name: Original brand
Certification: Original
Model Number: DMHT3006LFJ-13
Minimum Order Quantity: 3000pcs
Price: Negotiation
Packaging Details: 3000/Reel
Delivery Time: 2-3days
Payment Terms: T/T
Supply Ability: 100000pcs
Product: MOSFET MOSFET BVDSS: 25V-30V Technology: Si
Package: V-DFN5045-12 Transistor Polarity: N-Channel
Channel Pattern: Enhancement Pd-Power Dissipation: 2.1 W
Vds-Leakage Source Breakdown Electric Shock: 30 V
High Light:

n channel power mosfet


high power transistor

Mosfet Power Transistor DMHT3006LFJ-13 V-DFN5045-12 Mosfet BVDSS: 25V-30V



This MOSFET is designed to minimize the on-state resistance (RDS(ON)), yet maintain superior switching performance, making it ideal for high efficiency power management applications.



Low On-Resistance 

Low Input Capacitance 

Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) 

Halogen and Antimony Free. “Green” Device (Note 3)


Mechanical Data 

Case: V-DFN5045-12 

Case Material: Molded Plastic, ―Green‖ Molding Compound. UL Flammability Classification Rating 94V-0 

Moisture Sensitivity: Level 1 per J-STD-020 

Terminals: Finish – NiPdAu over Copper Leadframe.

Solderable per MIL-STD-202, Method 208 

Weight: 0.056grams (Approximate)






Transistor Polarity N-Channel
Channel No.  4 Channel
Leakage Source on-resistance 10 mOhms
Working Temperature -55C to +150C
Pd-Power Dissipation 2.1 W
Vgs th-Gate Source threshold Voltage 30 V
Configure Quad



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 BVDSS 25V - 30V High Current Mosfet , On State Resistance Fast Switching Transistor 0

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